N. Raghavan, N. Hwang, and C. M. Tan. “A comprehensive semi-empirical mobility model for strained-Si N-MOSFETs,” in 8th Int. Conf. on Solid-State and Integrated Circuit Technology, 2006, pp. 139-142.
N. Raghavan, N. Hwang, and C. M. Tan. “A comprehensive semi-empirical mobility model for strained-Si N-MOSFETs,” in 8th Int. Conf. on Solid-State and Integrated Circuit Technology, 2006, pp. 139-142.