C. M. Tan and N. Raghavan. “An approach to statistical analysis of gate oxide breakdown mechanisms,” in European Symp. on Reliability of Electron Devices, Failure physics and analysis, 2007.
C. M. Tan and N. Raghavan. “An approach to statistical analysis of gate oxide breakdown mechanisms,” in European Symp. on Reliability of Electron Devices, Failure physics and analysis, 2007.