Degradation mechanisms in gate-all-around silicon Nanowire field effect transistor under electrostatic discharge stress – a modeling approach

Cher Ming Tan and Xiangchen Chen, “Degradation mechanisms in gate-all-around silicon Nanowire field effect transistor under electrostatic discharge stress – a modeling approach,” Nano convergence, vol 1 (1), pp. 1-11 April 2014.
https://link.springer.com/article/10.1186/s40580-014-0011-9